IXFT6N100Q

Part NumberIXFT6N100Q

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 6A TO-268

DatasheetIXF(H,T)6N100Q

Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 6A (Tc) 180W (Tc) Surface Mount TO-268

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IXFT6N100Q - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXF(H,T)6N100Q

Standard Package

Manufacturer

IXYS

Series

HiPerFET™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.9Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 25V

FET Feature

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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