IXFT320N10T2

Part NumberIXFT320N10T2

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 320A TO-26

DatasheetIXFx320N10T2

Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 320A (Tc) 1000W (Tc) Surface Mount TO-268

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IXFT320N10T2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXFx320N10T2

Standard Package

Manufacturer

IXYS

Series

GigaMOS™, HiPerFET™, TrenchT2™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

320A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

430nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

26000pF @ 25V

FET Feature

Power Dissipation (Max)

1000W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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