IXFT18N100Q3

Part NumberIXFT18N100Q3

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 18A TO-268

DatasheetIXFx18N100Q3

Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 18A (Tc) 830W (Tc) Surface Mount TO-268

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IXFT18N100Q3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXFx18N100Q3

Standard Package

Manufacturer

IXYS

Series

HiPerFET™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

660mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

6.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4890pF @ 25V

FET Feature

Power Dissipation (Max)

830W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

All categories