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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXFx150N30X3, IXFT150N30X30HV
Standard Package 30
Manufacturer IXYS
Series HiPerFET™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 254nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13.1nF @ 25V
FET Feature -
Power Dissipation (Max) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268HV
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Texas Instruments, N-Channel 60V 100A (Ta) 3.1W (Ta), 156W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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Diodes Incorporated, N-Channel 60V 600mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),
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Nexperia USA Inc., N-Channel 60V 4.5A (Ta) 560mW (Ta), 6.25mW (Tc) Surface Mount 6-TSOP, TrenchMOS™
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