IXFR21N100Q

Part NumberIXFR21N100Q

ManufacturerIXYS

DescriptionMOSFET N-CH 1KV 18A ISOPLUS247

DatasheetIXFR21N100Q

Package / CaseISOPLUS247™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 18A (Tc) 350W (Tc) Through Hole ISOPLUS247™

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IXFR21N100Q - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXFR21N100Q

Standard Package

Manufacturer

IXYS

Series

HiPerFET™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5900pF @ 25V

FET Feature

Power Dissipation (Max)

350W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™

All categories

IXFR21N100Q

Part NumberIXFR21N100Q

ManufacturerIXYS

DescriptionMOSFET N-CH 1KV 18A ISOPLUS247

DatasheetIXFR21N100Q

Package / CaseISOPLUS247™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 18A (Tc) 350W (Tc) Through Hole ISOPLUS247™

IXFR21N100Q - Product Attributes

IXFR21N100Q - Tags