IXFR14N100Q2

Part NumberIXFR14N100Q2

ManufacturerIXYS

DescriptionMOSFET N-CH 1KV 9.5A ISOPLUS247

DatasheetIXFR14N100Q2

Package / CaseISOPLUS247™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 9.5A (Tc) 200W (Tc) Through Hole ISOPLUS247™

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IXFR14N100Q2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXFR14N100Q2

Standard Package

Manufacturer

IXYS

Series

HiPerFET™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

9.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 7A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

83nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 25V

FET Feature

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™

All categories

IXFR14N100Q2

Part NumberIXFR14N100Q2

ManufacturerIXYS

DescriptionMOSFET N-CH 1KV 9.5A ISOPLUS247

DatasheetIXFR14N100Q2

Package / CaseISOPLUS247™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 9.5A (Tc) 200W (Tc) Through Hole ISOPLUS247™

IXFR14N100Q2 - Product Attributes

IXFR14N100Q2 - Tags