IXFP4N100P

Part NumberIXFP4N100P

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 4A TO-220

DatasheetIXF(A,P)4N100P

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 4A (Tc) 150W (Tc) Through Hole TO-220AB

To learn about the specification of IXFP4N100P, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXFP4N100P with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXFP4N100P.
We are offering IXFP4N100P for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IXFP4N100P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXF(A,P)4N100P

Standard Package

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1456pF @ 25V

FET Feature

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

All categories