Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFN82N60Q3

IXFN82N60Q3

IXFN82N60Q3

Part NumberIXFN82N60Q3

ManufacturerIXYS

DescriptionMOSFET N-CH 600V 66A SOT-227

DatasheetIXFN82N60Q3

Package / CaseSOT-227-4, miniBLOC

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 66A (Tc) 960W (Tc) Chassis Mount SOT-227B

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IXFN82N60Q3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFN82N60Q3
Standard Package	10
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	75mOhm @ 41A, 10V
Vgs(th) (Max) @ Id	6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	275nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	13500pF @ 25V
FET Feature	-
Power Dissipation (Max)	960W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC

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IXFN82N60Q3 - Tags

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