IXFL30N120P

Part NumberIXFL30N120P

ManufacturerIXYS

DescriptionMOSFET N-CH 1200V 18A I5-PAK

DatasheetIXFL30N120P

Package / CaseISOPLUSi5-Pak™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1200V 18A (Tc) 357W (Tc) Through Hole ISOPLUSi5-Pak™

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IXFL30N120P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXFL30N120P

Standard Package

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

310nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

19000pF @ 25V

FET Feature

Power Dissipation (Max)

357W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUSi5-Pak™

Package / Case

ISOPLUSi5-Pak™

All categories

IXFL30N120P

Part NumberIXFL30N120P

ManufacturerIXYS

DescriptionMOSFET N-CH 1200V 18A I5-PAK

DatasheetIXFL30N120P

Package / CaseISOPLUSi5-Pak™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1200V 18A (Tc) 357W (Tc) Through Hole ISOPLUSi5-Pak™

IXFL30N120P - Product Attributes

IXFL30N120P - Tags