IXFK200N10P


IXFK200N10P

Part NumberIXFK200N10P

Manufacturer

Description

Datasheet

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IXFK200N10P - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package25
ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
PackagingBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs235nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7600pF @ 25V
FET Feature-
Power Dissipation (Max)830W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264AA (IXFK)
Package / CaseTO-264-3, TO-264AA

IXFK200N10P - Tags

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