IXFJ32N50Q

Part NumberIXFJ32N50Q

ManufacturerIXYS

DescriptionMOSFET N-CH 500V 32A TO-220

DatasheetIXFJ32N50Q

Package / CaseTO-220-3, Short Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 32A (Tc) 360W (Tc) Through Hole TO-268

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IXFJ32N50Q - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXFJ32N50Q

Standard Package

Manufacturer

IXYS

Series

HiPerFET™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

153nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3950pF @ 25V

FET Feature

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-268

Package / Case

TO-220-3, Short Tab

All categories

IXFJ32N50Q

Part NumberIXFJ32N50Q

ManufacturerIXYS

DescriptionMOSFET N-CH 500V 32A TO-220

DatasheetIXFJ32N50Q

Package / CaseTO-220-3, Short Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 32A (Tc) 360W (Tc) Through Hole TO-268

IXFJ32N50Q - Product Attributes

IXFJ32N50Q - Tags