IXFH60N65X2-4

Part NumberIXFH60N65X2-4

ManufacturerIXYS

DescriptionMOSFET N-CH

DatasheetIXFH60N65X2-4

Package / CaseTO-247-4

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 60A (Tc) 780W (Tc) Through Hole TO-247-4L

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IXFH60N65X2-4 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXFH60N65X2-4

Standard Package

Manufacturer

IXYS

Series

HiPerFET™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

52mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

108nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6300pF @ 25V

FET Feature

Power Dissipation (Max)

780W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-4L

Package / Case

TO-247-4

All categories

IXFH60N65X2-4

Part NumberIXFH60N65X2-4

ManufacturerIXYS

DescriptionMOSFET N-CH

DatasheetIXFH60N65X2-4

Package / CaseTO-247-4

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 60A (Tc) 780W (Tc) Through Hole TO-247-4L

IXFH60N65X2-4 - Product Attributes

IXFH60N65X2-4 - Tags