IXFH58N20Q

Part NumberIXFH58N20Q

ManufacturerIXYS

DescriptionMOSFET N-CH 200V 58A TO-247AD

DatasheetIXF(H,T)58N20Q

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 58A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

To learn about the specification of IXFH58N20Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXFH58N20Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXFH58N20Q.
We are offering IXFH58N20Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IXFH58N20Q - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXF(H,T)58N20Q

Standard Package

Manufacturer

IXYS

Series

HiPerFET™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 29A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 25V

FET Feature

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

All categories