IXFH32N100X
IXFH32N100X
Part Number IXFH32N100X
Manufacturer IXYS
Description MOSFET 1KV 32A ULTRA JCT TO-247
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 1000V 32A (Tc) 890W (Tc) Through Hole TO-247
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IXFH32N100X - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXFx32N100X(HV) Datasheet Prelim
Standard Package 30
Manufacturer IXYS
Series HiPerFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 6V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4075pF @ 25V
FET Feature -
Power Dissipation (Max) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
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