IXFH32N100X
IXFH32N100X
Part Number IXFH32N100X Manufacturer IXYS Description MOSFET 1KV 32A ULTRA JCT TO-247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1000V 32A (Tc) 890W (Tc) Through Hole TO-247
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IXFH32N100X - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXFx32N100X(HV) Datasheet Prelim Standard Package 30 Manufacturer IXYS Series HiPerFET™ Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220mOhm @ 16A, 10V Vgs(th) (Max) @ Id 6V @ 4mA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4075pF @ 25V FET Feature - Power Dissipation (Max) 890W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3
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