Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFH32N100X

IXFH32N100X

IXFH32N100X

Part NumberIXFH32N100X

ManufacturerIXYS

DescriptionMOSFET 1KV 32A ULTRA JCT TO-247

DatasheetIXFx32N100X(HV) Datasheet Prelim

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 32A (Tc) 890W (Tc) Through Hole TO-247

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IXFH32N100X - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFx32N100X(HV) Datasheet Prelim
Standard Package	30
Manufacturer	IXYS
Series	HiPerFET™
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	220mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	6V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4075pF @ 25V
FET Feature	-
Power Dissipation (Max)	890W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3

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IXFH32N100X - Tags

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