IXFH13N100

Part NumberIXFH13N100

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 12.5A TO-247

DatasheetIXF(H,M)10/12/13N100

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 12.5A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

To learn about the specification of IXFH13N100, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXFH13N100 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXFH13N100.
We are offering IXFH13N100 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IXFH13N100 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXF(H,M)10/12/13N100

Standard Package

Manufacturer

IXYS

Series

HiPerFET™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

12.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

155nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 25V

FET Feature

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

All categories