IXFH12N50F

Part NumberIXFH12N50F

ManufacturerIXYS-RF

DescriptionMOSFET N-CH 500V 12A TO247

DatasheetIXFH12N50F, IXFT12N50F

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 12A (Tc) 180W (Tc) Through Hole TO-247 (IXFH)

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IXFH12N50F - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXFH12N50F, IXFT12N50F

Standard Package

Manufacturer

IXYS-RF

Series

HiPerRF™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5.5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1870pF @ 25V

FET Feature

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXFH)

Package / Case

TO-247-3

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