IXFB50N80Q2

Part NumberIXFB50N80Q2

ManufacturerIXYS

DescriptionMOSFET N-CH 800V 50A PLUS264

DatasheetIXFB50N80Q2

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 50A (Tc) 1135W (Tc) Through Hole PLUS264™

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IXFB50N80Q2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXFB50N80Q2

Standard Package

Manufacturer

IXYS

Series

HiPerFET™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7200pF @ 25V

FET Feature

Power Dissipation (Max)

1135W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA

All categories

IXFB50N80Q2

Part NumberIXFB50N80Q2

ManufacturerIXYS

DescriptionMOSFET N-CH 800V 50A PLUS264

DatasheetIXFB50N80Q2

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 50A (Tc) 1135W (Tc) Through Hole PLUS264™

IXFB50N80Q2 - Product Attributes

IXFB50N80Q2 - Tags