IXFB40N110P

Part NumberIXFB40N110P

ManufacturerIXYS

DescriptionMOSFET N-CH 1100V 40A PLUS264

DatasheetIXFB40N110P

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1100V 40A (Tc) 1250W (Tc) Through Hole PLUS264™

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IXFB40N110P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXFB40N110P

Standard Package

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1100V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

260mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

310nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

19000pF @ 25V

FET Feature

Power Dissipation (Max)

1250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA

All categories

IXFB40N110P

Part NumberIXFB40N110P

ManufacturerIXYS

DescriptionMOSFET N-CH 1100V 40A PLUS264

DatasheetIXFB40N110P

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1100V 40A (Tc) 1250W (Tc) Through Hole PLUS264™

IXFB40N110P - Product Attributes

IXFB40N110P - Tags