IXFB210N20P

Part NumberIXFB210N20P

ManufacturerIXYS

DescriptionMOSFET N-CH 200V 210A PLUS264

DatasheetIXFB210N20P

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 210A (Tc) 1500W (Tc) Through Hole PLUS264™

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IXFB210N20P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXFB210N20P

Standard Package

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

210A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 105A, 10V

Vgs(th) (Max) @ Id

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

255nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

18600pF @ 25V

FET Feature

Power Dissipation (Max)

1500W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA

All categories

IXFB210N20P

Part NumberIXFB210N20P

ManufacturerIXYS

DescriptionMOSFET N-CH 200V 210A PLUS264

DatasheetIXFB210N20P

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 210A (Tc) 1500W (Tc) Through Hole PLUS264™

IXFB210N20P - Product Attributes

IXFB210N20P - Tags