Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFA4N100Q

IXFA4N100Q

IXFA4N100Q

Part NumberIXFA4N100Q

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 4A TO-263

DatasheetIXF(A,P)4N100Q

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 4A (Tc) 150W (Tc) Surface Mount TO-263 (IXFA)

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IXFA4N100Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXF(A,P)4N100Q
Standard Package	50
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1050pF @ 25V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (IXFA)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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