IXBX75N170


IXBX75N170

Part NumberIXBX75N170

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IXBX75N170 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package30
ManufacturerIXYS
SeriesBIMOSFET™
PackagingTube
Part StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)200A
Current - Collector Pulsed (Icm)580A
Vce(on) (Max) @ Vge, Ic3.1V @ 15V, 75A
Power - Max1040W
Switching Energy-
Input TypeStandard
Gate Charge350nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)1.5µs
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePLUS247™-3
Base Part NumberIXB*75N170

IXBX75N170 - Tags

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