IXBH10N170


IXBH10N170

Part NumberIXBH10N170

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IXBH10N170 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package30
ManufacturerIXYS
SeriesBIMOSFET™
PackagingTube
Part StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 10A
Power - Max140W
Switching Energy6mJ (off)
Input TypeStandard
Gate Charge30nC
Td (on/off) @ 25°C35ns/500ns
Test Condition1360V, 10A, 56Ohm, 15V
Reverse Recovery Time (trr)360ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXBH)

IXBH10N170 - Tags

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