ISP25DP06LMXTSA1

Part NumberISP25DP06LMXTSA1

ManufacturerInfineon Technologies

DescriptionMOSFET P-CH 60V SOT223-4

DatasheetPower, Sensing Selection Guide 2019

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 1.9A (Ta) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4

To learn about the specification of ISP25DP06LMXTSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add ISP25DP06LMXTSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of ISP25DP06LMXTSA1.
We are offering ISP25DP06LMXTSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

ISP25DP06LMXTSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

Power, Sensing Selection Guide 2019

Standard Package

1000

Manufacturer

Infineon Technologies

Series

OptiMOS™

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

250mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id

2V @ 270µA

Gate Charge (Qg) (Max) @ Vgs

13.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

420pF @ 30V

FET Feature

Power Dissipation (Max)

1.8W (Ta), 5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

All categories