ISP25DP06LMSATMA1

Part NumberISP25DP06LMSATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET P-CH 60V SOT223-3

DatasheetPower, Sensing Selection Guide 2019

Package / CaseTO-261-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 1.9A (Ta) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223

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ISP25DP06LMSATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

Power, Sensing Selection Guide 2019

Standard Package

1000

Manufacturer

Infineon Technologies

Series

OptiMOS™

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

250mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id

2V @ 270µA

Gate Charge (Qg) (Max) @ Vgs

13.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

420pF @ 30V

FET Feature

Power Dissipation (Max)

1.8W (Ta), 5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223

Package / Case

TO-261-3

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