IRLS3813PBF

Part NumberIRLS3813PBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 30V 160A D2PAK

DatasheetIRLS3813PbF

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 160A (Tc) 195W (Tc) Surface Mount D2PAK

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IRLS3813PBF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRLS3813PbF

Standard Package

1000

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Tube

Part Status

Discontinued at Digi-Key

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.95mOhm @ 148A, 10V

Vgs(th) (Max) @ Id

2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

83nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8020pF @ 25V

FET Feature

Power Dissipation (Max)

195W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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