IRLHS6342TR2PBF


IRLHS6342TR2PBF

Part NumberIRLHS6342TR2PBF

Manufacturer

Description

Datasheet

Package / Case6-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRLHS6342TR2PBF - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingCut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.7A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs15.5mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1019pF @ 25V
FET Feature-
Power Dissipation (Max)2.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-PQFN (2x2)
Package / Case6-PowerVDFN

IRLHS6342TR2PBF - Tags

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