IRLH5030TR2PBF


IRLH5030TR2PBF

Part NumberIRLH5030TR2PBF

Manufacturer

Description

Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRLH5030TR2PBF - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingCut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs94nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds5185pF @ 50V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePQFN (5x6) Single Die
Package / Case8-PowerVDFN

IRLH5030TR2PBF - Tags

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