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IRLD110PBF

IRLD110PBF

Part NumberIRLD110PBF

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 1A 4-DIP

DatasheetIRLD110

Package / Case4-DIP (0.300", 7.62mm)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

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IRLD110PBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRLD110
Standard Package	100
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Rds On (Max) @ Id, Vgs	540mOhm @ 600mA, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.1nC @ 5V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)

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