IRLD110

Part NumberIRLD110

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 1A 4-DIP

DatasheetIRLD110

Package / Case4-DIP (0.300", 7.62mm)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

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IRLD110 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRLD110

Standard Package

2500

Manufacturer

Vishay Siliconix

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

540mOhm @ 600mA, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

4-DIP, Hexdip, HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)

All categories

IRLD110

Part NumberIRLD110

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 1A 4-DIP

DatasheetIRLD110

Package / Case4-DIP (0.300", 7.62mm)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

IRLD110 - Product Attributes

IRLD110 - Tags