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IRLB4030PBF

IRLB4030PBF

Part NumberIRLB4030PBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 180A TO-220AB

DatasheetIRLB4030PbF

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-220AB

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IRLB4030PBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRLB4030PbF
Standard Package	1000
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.3mOhm @ 110A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	130nC @ 4.5V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	11360pF @ 50V
FET Feature	-
Power Dissipation (Max)	370W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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