IRL40B212


IRL40B212

Part NumberIRL40B212

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRL40B212 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1000
ManufacturerInfineon Technologies
SeriesHEXFET®, StrongIRFET™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs137nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8320pF @ 25V
FET Feature-
Power Dissipation (Max)231W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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IRL40B212 - Tags

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