IRFSL59N10D

Part NumberIRFSL59N10D

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 59A TO-262

DatasheetIRFB59N10D, IRFS(L)59N10D

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 59A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262

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IRFSL59N10D - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFB59N10D, IRFS(L)59N10D

Standard Package

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

25mOhm @ 35.4A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

114nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2450pF @ 25V

FET Feature

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

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