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IRFSL4229PBF


IRFSL4229PBF

Part NumberIRFSL4229PBF

Manufacturer

Description

Datasheet

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRFSL4229PBF - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package50
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs48mOhm @ 26A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4560pF @ 25V
FET Feature-
Power Dissipation (Max)330W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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