IRFSL3206PBF

Part NumberIRFSL3206PBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 60V 120A TO-262

DatasheetIRFB3206PbF, IRFS(L)3206PbF

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 120A (Tc) 300W (Tc) Through Hole TO-262

To learn about the specification of IRFSL3206PBF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRFSL3206PBF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRFSL3206PBF.
We are offering IRFSL3206PBF for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IRFSL3206PBF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFB3206PbF, IRFS(L)3206PbF

Standard Package

1000

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6540pF @ 50V

FET Feature

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

All categories