IRFSL23N20D102P

Part NumberIRFSL23N20D102P

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 24A TO-262

DatasheetIRFB23N20DPbF, IRFS(L)23N20DPbF

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-262

To learn about the specification of IRFSL23N20D102P, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRFSL23N20D102P with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRFSL23N20D102P.
We are offering IRFSL23N20D102P for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IRFSL23N20D102P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFB23N20DPbF, IRFS(L)23N20DPbF

Standard Package

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1960pF @ 25V

FET Feature

Power Dissipation (Max)

3.8W (Ta), 170W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

All categories