IRFSL11N50A

Part NumberIRFSL11N50A

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 500V 11A TO-262

DatasheetIRFSL11N50A

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 11A (Tc) 190W (Tc) Through Hole TO-262-3

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IRFSL11N50A - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFSL11N50A

Standard Package

Manufacturer

Vishay Siliconix

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

550mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1426pF @ 25V

FET Feature

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

All categories

IRFSL11N50A

Part NumberIRFSL11N50A

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 500V 11A TO-262

DatasheetIRFSL11N50A

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 11A (Tc) 190W (Tc) Through Hole TO-262-3

IRFSL11N50A - Product Attributes

IRFSL11N50A - Tags