IRFS59N10DTRRP

Part NumberIRFS59N10DTRRP

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 59A D2PAK

DatasheetIRF(B,S.SL)59N10DPbF

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 59A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK

To learn about the specification of IRFS59N10DTRRP, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRFS59N10DTRRP with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRFS59N10DTRRP.
We are offering IRFS59N10DTRRP for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IRFS59N10DTRRP - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRF(B,S.SL)59N10DPbF

Standard Package

800

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

25mOhm @ 35.4A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

114nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2450pF @ 25V

FET Feature

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All categories