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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB4610PbF, IRFS(L)4610PbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 50V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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SIHH14N65E-T1-GE3
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ON Semiconductor, N-Channel 500V 20A (Tc) 38.5W (Tc) Through Hole TO-220F, UniFET™
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BUK762R0-40C,118
Nexperia USA Inc., N-Channel 40V 100A (Tc) 333W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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RW1E014SNT2R
Rohm Semiconductor, N-Channel 30V 1.4A (Ta) 700mW (Ta) Surface Mount 6-WEMT,
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Vishay Siliconix, N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3,
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Toshiba Semiconductor and Storage, N-Channel 40V 100A (Ta) 100W (Tc) Surface Mount DPAK+, U-MOSVIII-H
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Vishay Siliconix, N-Channel 25V 81.7A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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TPN8R903NL,LQ
Toshiba Semiconductor and Storage, N-Channel 30V 20A (Tc) 700mW (Ta), 22W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
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IAUT240N08S5N019ATMA1
Infineon Technologies, N-Channel 80V 240A (Tc) 230W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™-5
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