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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFS4227PbF, IRFSL4227PbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
FET Feature -
Power Dissipation (Max) 330W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TN2524N8-G
Microchip Technology, N-Channel 240V 360mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89),
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TN0104N3-G
Microchip Technology, N-Channel 40V 450mA (Ta) 1W (Tc) Through Hole TO-92-3,
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SIHB30N60E-GE3
Vishay Siliconix, N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D2PAK,
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FDMA86108LZ
ON Semiconductor, N-Channel 100V 2.2A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®
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IRL620STRLPBF
Vishay Siliconix, N-Channel 200V 5.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D2PAK,
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DN2625K4-G
Microchip Technology, N-Channel 250V 1.1A (Tj) Surface Mount TO-252, (D-Pak),
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STU7N105K5
STMicroelectronics, N-Channel 1050V 4A (Tc) 110W (Tc) Through Hole IPAK (TO-251), SuperMESH5™
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FDS3512
ON Semiconductor, N-Channel 80V 4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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CSD17552Q3A
Texas Instruments, N-Channel 30V 15A (Ta), 60A (Tc) 2.6W (Ta) Surface Mount 8-SON (3.3x3.3), NexFET™
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FDU3N40TU
ON Semiconductor, N-Channel 400V 2A (Tc) 30W (Tc) Through Hole I-PAK, UniFET™
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IRFS9N60ATRLPBF
Vishay Siliconix, N-Channel 600V 9.2A (Tc) 170W (Tc) Surface Mount D2PAK,
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PH2925U,115
Nexperia USA Inc., N-Channel 25V 100A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™
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