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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFS4227PbF, IRFSL4227PbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
FET Feature -
Power Dissipation (Max) 330W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFT26N100XHV
IXYS, N-Channel 1000V 26A (Ta) 860mW (Ta) Surface Mount TO-268HV (IXFT), HiPerFET™
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PMV37EN2R
Nexperia USA Inc., N-Channel 30V 4.5A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB,
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STP3NK50Z
STMicroelectronics, N-Channel 500V 2.3A (Tc) 45W (Tc) Through Hole TO-220AB, SuperMESH™
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FDMS7656AS
ON Semiconductor, N-Channel 30V 31A (Ta), 49A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™
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NTP5860NG
ON Semiconductor, N-Channel 60V 220A (Tc) 283W (Tc) Through Hole TO-220AB,
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SIS890DN-T1-GE3
Vishay Siliconix, N-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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FDC2512
ON Semiconductor, N-Channel 150V 1.4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
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SIHF12N50C-E3
Vishay Siliconix, N-Channel 500V 12A (Tc) 36W (Tc) Through Hole TO-220 Full Pack,
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SIHB24N65E-GE3
Vishay Siliconix, N-Channel 650V 24A (Tc) 250W (Tc) Surface Mount D2PAK,
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IRFP4368PBF
Infineon Technologies, N-Channel 75V 195A (Tc) 520W (Tc) Through Hole TO-247AC, HEXFET®
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TSM70N10CP ROG
Taiwan Semiconductor Corporation, N-Channel 100V 70A (Tc) 120W (Tc) Surface Mount TO-252, (D-Pak),
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IXTF02N450
IXYS, N-Channel 4500V 200mA (Tc) 78W (Tc) Through Hole ISOPLUS i4-PAC™,
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