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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR4105ZPbF, IRFU4105ZPbF
Standard Package 2000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
FET Feature -
Power Dissipation (Max) 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS8320L
ON Semiconductor, N-Channel 40V 36A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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DMN61D9UW-7
Diodes Incorporated, N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323,
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IPB100N12S305ATMA1
Infineon Technologies, N-Channel 120V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3, OptiMOS™
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IRF840SPBF
Vishay Siliconix, N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,
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STF15N60M2-EP
STMicroelectronics, N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2-EP
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IRF820STRLPBF
Vishay Siliconix, N-Channel 500V 2.5A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D2PAK,
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IRF60B217
Infineon Technologies, N-Channel 60V 60A (Tc) 83W (Tc) Through Hole TO-220AB, StrongIRFET™
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ZXMN10A09KTC
Diodes Incorporated, N-Channel 100V 5A (Ta) 2.15W (Ta) Surface Mount TO-252-3,
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SI7898DP-T1-E3
Vishay Siliconix, N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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ZXMN2A01FTA
Diodes Incorporated, N-Channel 20V 1.9A (Ta) 625mW (Ta) Surface Mount SOT-23-3,
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IPB015N08N5ATMA1
Infineon Technologies, N-Channel 80V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7, OptiMOS™
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BSC036NE7NS3GATMA1
Infineon Technologies, N-Channel 75V 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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