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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR3710ZPbF, IRFU3710ZPbF
Standard Package 2000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2930pF @ 25V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
TSM025NB04CR RLG
Taiwan Semiconductor Corporation, N-Channel 40V 24A (Ta), 161A (Tc) 3.1W (Ta), 136W (Tc) Surface Mount 8-PDFN (5x6),
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BVSS138LT1G
ON Semiconductor, N-Channel 50V 200mA (Ta) 225mW (Ta) Surface Mount SOT-23-3,
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2N7002 TR
Central Semiconductor Corp, N-Channel 60V 115mA (Tc) 350mW (Ta) Surface Mount SOT-23,
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IRFS3806TRLPBF
Infineon Technologies, N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount D2PAK, HEXFET®
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IRFH5210TRPBF
Infineon Technologies, N-Channel 100V 10A (Ta), 55A (Tc) 3.6W (Ta) Surface Mount 8-PQFN (5x6), HEXFET®
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R6011KNJTL
Rohm Semiconductor, N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-263,
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FQB7N60TM
ON Semiconductor, N-Channel 600V 7.4A (Tc) 3.13W (Ta), 142W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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NTMFS4834NT1G
ON Semiconductor, N-Channel 30V 13A (Ta), 130A (Tc) 900mW (Ta), 86.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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DN2540N3-G-P003
Microchip Technology, N-Channel 400V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226),
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DMN2005UFG-13
Diodes Incorporated, N-Channel 20V 18.1A (Tc) 1.05W (Ta) Surface Mount PowerDI3333-8,
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TK5P60W,RVQ
Toshiba Semiconductor and Storage, N-Channel 600V 5.4A (Ta) 60W (Tc) Surface Mount DPAK, DTMOSIV
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STP80NF12
STMicroelectronics, N-Channel 120V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II
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