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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR3710ZPbF, IRFU3710ZPbF
Standard Package 2000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2930pF @ 25V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SSM3K72CFS,LF
Toshiba Semiconductor and Storage, N-Channel 60V 170mA (Ta) 150mW (Ta) Surface Mount SSM, U-MOSVII-H
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SI8416DB-T2-E1
Vishay Siliconix, N-Channel 8V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1), TrenchFET®
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STF8NK100Z
STMicroelectronics, N-Channel 1000V 6.5A (Tc) 40W (Tc) Through Hole TO-220FP, SuperMESH™
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STW20NM60
STMicroelectronics, N-Channel 600V 20A (Tc) 192W (Tc) Through Hole TO-247-3, MDmesh™
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NDFP03N150CG
ON Semiconductor, N-Channel 1500V 2.5A (Ta) 2W (Ta), 32W (Tc) Through Hole TO-220-3,
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IRF634STRRPBF
Vishay Siliconix, N-Channel 250V 8.1A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,
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SIHB15N50E-GE3
Vishay Siliconix, N-Channel 500V 14.5A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263),
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FDS5670
ON Semiconductor, N-Channel 60V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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R6009KNJTL
Rohm Semiconductor, N-Channel 600V 9A (Tc) 94W (Tc) Surface Mount TO-263,
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IPC70N04S5L4R2ATMA1
Infineon Technologies, N-Channel 40V 70A (Tc) 50W (Tc) Surface Mount PG-TDSON-8-34, Automotive, AEC-Q101, OptiMOS™
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FDS6680A
ON Semiconductor, N-Channel 30V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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SI7848BDP-T1-GE3
Vishay Siliconix, N-Channel 40V 47A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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