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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR3710ZPbF, IRFU3710ZPbF
Standard Package 2000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2930pF @ 25V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
BSH105,235
Nexperia USA Inc., N-Channel 20V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB,
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DMT69M8LFV-7
Diodes Incorporated, N-Channel 60V 45A (Tc) 42W (Tc) Surface Mount PowerDI3333-8, Automotive, AEC-Q101
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IPD60R600P7SAUMA1
Infineon Technologies, N-Channel 600V 6A (Tc) 30W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
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AO4402
Alpha & Omega Semiconductor Inc., N-Channel 20V 20A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,
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STP16N65M5
STMicroelectronics, N-Channel 650V 12A (Tc) 90W (Tc) Through Hole TO-220-3, MDmesh™ V
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TK10E60W,S1VX
Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Ta) 100W (Tc) Through Hole TO-220, DTMOSIV
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ZXMN6A07FTA
Diodes Incorporated, N-Channel 60V 1.2A (Ta) 625mW (Ta) Surface Mount SOT-23-3,
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IRFP7430PBF
Infineon Technologies, N-Channel 40V 195A (Tc) 366W (Tc) Through Hole TO-247AC, HEXFET®, StrongIRFET™
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FDD6612A
ON Semiconductor, N-Channel 30V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®
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IRLR3410TRPBF
Infineon Technologies, N-Channel 100V 17A (Tc) 79W (Tc) Surface Mount D-Pak, HEXFET®
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AOD1N60
Alpha & Omega Semiconductor Inc., N-Channel 600V 1.3A (Tc) 45W (Tc) Surface Mount TO-252, (D-Pak),
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PSMN045-80YS,115
Nexperia USA Inc., N-Channel 80V 24A (Tc) 56W (Tc) Surface Mount LFPAK56, Power-SO8,
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