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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_320
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
TSM80N1R2CH C5G
Taiwan Semiconductor Corporation, N-Channel 800V 5.5A (Tc) 110W (Tc) Through Hole TO-251 (IPAK),
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SI7308DN-T1-E3
Vishay Siliconix, N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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STFU13N65M2
STMicroelectronics, N-Channel 650V 10A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2
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IRFR3710ZTRPBF
Infineon Technologies, N-Channel 100V 42A (Tc) 140W (Tc) Surface Mount D-Pak, HEXFET®
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FDMC2512SDC
ON Semiconductor, N-Channel 25V 32A (Ta), 40A (Tc) 3W (Ta), 66W (Tc) Surface Mount Dual Cool ™ 33, Dual Cool™, PowerTrench®, SyncFET™
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TN2640N3-G
Microchip Technology, N-Channel 400V 220mA (Tj) 740mW (Ta) Through Hole TO-92-3,
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STP18NM80
STMicroelectronics, N-Channel 800V 17A (Tc) 190W (Tc) Through Hole TO-220AB, MDmesh™
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CPH3448-TL-W
ON Semiconductor, N-Channel 30V 4A (Ta) 1W (Ta) Surface Mount 3-CPH,
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IRF7807VTRPBF
Infineon Technologies, N-Channel 30V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
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BUK962R8-60E,118
Nexperia USA Inc., N-Channel 60V 120A (Tc) 324W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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BSC016N03MSGATMA1
Infineon Technologies, N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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SI4850EY-T1-E3
Vishay Siliconix, N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SO, TrenchFET®
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