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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_310 Standard Package 1 Manufacturer Vishay Siliconix Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.6Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRFBC40PBF Vishay Siliconix, N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB,
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STI21N65M5 STMicroelectronics, N-Channel 650V 17A (Tc) 125W (Tc) Through Hole I2PAK, MDmesh™ V
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IRFD024PBF Vishay Siliconix, N-Channel 60V 2.5A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
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STU7N65M2 STMicroelectronics, N-Channel 650V 5A (Tc) 60W (Tc) Through Hole IPAK (TO-251), MDmesh™
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DMN6013LFG-7 Diodes Incorporated, N-Channel 60V 10.3A (Ta), 45A (Tc) 1W (Ta) Surface Mount PowerDI3333-8,
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IRFL110TRPBF Vishay Siliconix, N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,
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SSM3K59CTB,L3F Toshiba Semiconductor and Storage, N-Channel 40V 2A (Ta) 1W (Ta) Surface Mount CST3B, U-MOSVII-H
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PMV37EN2R Nexperia USA Inc., N-Channel 30V 4.5A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB,
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NTD20N03L27T4G ON Semiconductor, N-Channel 30V 20A (Ta) 1.75W (Ta), 74W (Tc) Surface Mount DPAK,
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AO3400A Alpha & Omega Semiconductor Inc., N-Channel 30V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,
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PMV37EN2R Nexperia USA Inc., N-Channel 30V 4.5A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB,
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SI7114DN-T1-E3 Vishay Siliconix, N-Channel 30V 11.7A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
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