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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STD1NK80Z-1
STMicroelectronics, N-Channel 800V 1A (Tc) 45W (Tc) Through Hole I-PAK, SuperMESH™
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IPB032N10N5ATMA1
Infineon Technologies, N-Channel 100V 166A (Tc) 187W (Tc) Surface Mount PG-TO263-7, OptiMOS™
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SIRC06DP-T1-GE3
Vishay Siliconix, N-Channel 30V 32A (Ta), 60A (Tc) 5W (Ta), 50W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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DMN2990UFA-7B
Diodes Incorporated, N-Channel 20V 510mA (Ta) 400mW (Ta) Surface Mount 3-X2-DFN0806,
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IRF7821TRPBF
Infineon Technologies, N-Channel 30V 13.6A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
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IRFBE30SPBF
Vishay Siliconix, N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D2PAK,
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TSM70N900CP ROG
Taiwan Semiconductor Corporation, N-Channel 700V 4.5A (Tc) 50W (Tc) Surface Mount TO-252, (D-Pak),
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TN0606N3-G
Microchip Technology, N-Channel 60V 500mA (Tj) 1W (Tc) Through Hole TO-92-3,
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DMN61D8LQ-7
Diodes Incorporated, N-Channel 60V 470mA (Ta) 390mW (Ta) Surface Mount SOT-23,
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IRF6613TRPBF
Infineon Technologies, N-Channel 40V 23A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT, HEXFET®
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IPP040N06N3GXKSA1
Infineon Technologies, N-Channel 60V 90A (Tc) 188W (Tc) Through Hole PG-TO220-3, OptiMOS™
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IPB110N20N3LFATMA1
Infineon Technologies, N-Channel 200V 88A (Tc) 250W (Tc) Surface Mount PG-TO263-3, OptiMOS™ 3
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