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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
R6004JNJGTL
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STL2N80K5
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SIR158DP-T1-GE3
Vishay Siliconix, N-Channel 30V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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R8008ANX
Rohm Semiconductor, N-Channel 800V 8A (Ta) 50W (Tc) Through Hole TO-220FM,
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SI7322ADN-T1-GE3
Vishay Siliconix, N-Channel 100V 15.1A (Tc) 26W (Tc) Surface Mount PowerPAK® 1212-8, ThunderFET®
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SIA432DJ-T1-GE3
Vishay Siliconix, N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
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CSD17553Q5A
Texas Instruments, N-Channel 30V 23.5A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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APT10045JLL
Microsemi Corporation, N-Channel 1000V 21A (Tc) 460W (Tc) Chassis Mount ISOTOP®, POWER MOS 7®
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TK290P60Y,RQ
Toshiba Semiconductor and Storage, N-Channel 600V 11.5A (Tc) 100W (Tc) Surface Mount DPAK, DTMOSV
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CSD17578Q3A
Texas Instruments, N-Channel 30V 20A (Ta) 3.2W (Ta), 37W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™
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SIHG35N60EF-GE3
Vishay Siliconix, N-Channel 600V 32A (Tc) 250W (Tc) Through Hole TO-247AC, EF
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DMN65D8LFB-7
Diodes Incorporated, N-Channel 60V 260mA (Ta) 430mW (Ta) Surface Mount X1-DFN1006-3,
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