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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRLL014NTRPBF
Infineon Technologies, N-Channel 55V 2A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
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FQD7N10LTM
ON Semiconductor, N-Channel 100V 5.8A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak, QFET®
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IXFK170N20T
IXYS, N-Channel 200V 170A (Tc) 1150W (Tc) Through Hole TO-264AA (IXFK), GigaMOS™
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FDMS86350ET80
ON Semiconductor, N-Channel 80V 25A (Ta), 198A (Tc) 3.3W (Ta), 187W (Tc) Surface Mount Power56, PowerTrench®
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BUK7626-100B,118
Nexperia USA Inc., N-Channel 100V 49A (Tc) 157W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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SQJ848EP-T1_GE3
Vishay Siliconix, N-Channel 40V 47A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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IRFR014TRPBF
Vishay Siliconix, N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,
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2N7002A-7
Diodes Incorporated, N-Channel 60V 180mA (Ta) 370mW (Ta) Surface Mount SOT-23,
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STL110N10F7
STMicroelectronics, N-Channel 100V 107A (Tc) 136W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VII
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STD2N95K5
STMicroelectronics, N-Channel 950V 2A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH5™
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TSM2318CX RFG
Taiwan Semiconductor Corporation, N-Channel 40V 3.9A (Ta) 1.25W (Ta) Surface Mount SOT-23,
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STP40NF10
STMicroelectronics, N-Channel 100V 50A (Tc) 150W (Tc) Through Hole TO-220AB, STripFET™ II
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