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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 75
Manufacturer Vishay Siliconix
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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ON Semiconductor, N-Channel 60V 12A (Tc) 3.9W (Ta), 48W (Tc) Surface Mount TO-252-3,
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SI2374DS-T1-GE3
Vishay Siliconix, N-Channel 20V 4.5A (Ta), 5.9A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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Rohm Semiconductor, N-Channel 1700V 5.9A (Tc) 57W (Tc) Surface Mount TO-268,
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