IRFI830G

Part NumberIRFI830G

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 500V 3.1A TO220FP

DatasheetIRFI830G

Package / CaseTO-220-3 Full Pack, Isolated Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 3.1A (Tc) 35W (Tc) Through Hole TO-220-3

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IRFI830G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFI830G

Standard Package

1000

Manufacturer

Vishay Siliconix

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

610pF @ 25V

FET Feature

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Full Pack, Isolated Tab

All categories

IRFI830G

Part NumberIRFI830G

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 500V 3.1A TO220FP

DatasheetIRFI830G

Package / CaseTO-220-3 Full Pack, Isolated Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 3.1A (Tc) 35W (Tc) Through Hole TO-220-3

IRFI830G - Product Attributes

IRFI830G - Tags