IRFHM8363TR2PBF


IRFHM8363TR2PBF

Part NumberIRFHM8363TR2PBF

Manufacturer

Description

Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRFHM8363TR2PBF - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingCut Tape (CT)
Part StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A
Rds On (Max) @ Id, Vgs14.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1165pF @ 10V
Power - Max2.7W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device Package8-PQFN (3.3x3.3), Power33
Base Part NumberIRFHM8363PBF

IRFHM8363TR2PBF - Tags

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