IRFH6200TR2PBF

Part NumberIRFH6200TR2PBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 20V 100A 5X6 PQFN

DatasheetIRFH6200PBF

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 49A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)

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IRFH6200TR2PBF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFH6200PBF

Standard Package

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

49A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

0.95mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

1.1V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

230nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

10890pF @ 10V

FET Feature

Power Dissipation (Max)

3.6W (Ta), 156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerVDFN

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