IRFH5304TRPBF

Part NumberIRFH5304TRPBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFH5304PBF
Standard Package	1
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 47A, 10V
Vgs(th) (Max) @ Id	2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2360pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (5x6)
Package / Case	8-PowerVDFN

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IRFS3006TRLPBF	Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®	View
SQJ158EP-T1_GE3	Vishay Siliconix, N-Channel 60V 23A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View

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